The German scientists team found that processing transistors with a scandium-aluminum nitride (SCALN) can be achieved with maximum output power and reduce power consumption based on silicon.
Although Si semiconductors are the most successful and common in modern devices, but gradually approach their physical limit of efficiency. Therefore, the three German research organizations have combined their efforts to study the structure of a new material, as well as develop components and systems based on its future electronics.
It is known that the limitations of the semiconductor can be overcome using gallium nitride (GAN), which works better in high voltage, temperature and high-frequency switching, but the team decided to go further and further improve the energy efficiency and durability of devices. For this purpose, nitride scandium-aluminum will be used.
SCALN is a piezoelectric semiconductor material with high dielectric strength, but so far he is poorly studied in terms of its applicability in microelectronic applications. German scientists have already proven that it has unique physical properties and is excellent for improving the power electronic components.
The goal of a joint project is to grow the crystal lattice SCALN on the GAN layer and the use of the obtained heterostructures for processing the transistors with high bandwidth. This will reduce the loss of systems during switching, will increase the efficiency of work and will make them more compact. According to the team, they strive to double the maximum possible output power of devices, in parallel reducing power consumption.
At the moment, the main problem is to grow crystals of the desired structure, since no one did before. Over this, researchers will work for the next few months to begin successfully apply the material in electronics.
Not only materials are improved, but also ways to create transistors. Recently, scientists reported