The international team of researchers has developed a new technology for the manufacture of high-quality transistors from two-dimensional materials, which significantly reduces the cost of their production.
Scientists have demonstrated that lithography using a probe heated above 100 ° C surpassed standard methods for manufacturing metal electrodes on 2D semiconductors. These transition materials can potentially replace silicon in atomic chips of the future. The proposed method called the thermal scanning probe lithography (T-SPL) has a number of advantages over modern alternatives.
First of all, the new technology significantly improves the quality of two-dimensional transistors, removing the Schottky barrier that prevents the stream of electrons on the metal boundary and a two-dimensional substrate. In addition, unlike electron-ray lithography, T-SPL allows the microcircuit developers to easily apply the drawing of the electrodes.
The new method helps to significantly reduce production costs, because it does not require the creation of special environmental conditions and consumes not so much energy as electron-ray lithography. Therefore, it can be much easier to use on an industrial scale.
In the image: Molybdenum disulfide monoomic layer (MOS2) with electrodes formed using thermal scanning probe lithography
Scientists hope that in the future the technology will be integrated into 3D printers equipped with nanoscale tools. In fact, such plans may well be implemented, since 3D printing technology is now quickly improved. Recently, the team of engineers presented a way